Molecular-beam epitaxy of MnAs on patterned GaAs substrates
نویسندگان
چکیده
منابع مشابه
Improved performance of strained InGaAs/GaAs photodiodes grown on patterned GaAs substrates by molecular beam epitaxy
We have experimentally studied the photoresponse characteristics of strained In,Gar _ XAs (0.05<~<0.20) p-i-n photodiodes grown in small holes etched in GaAs substrates where the thickness of the i region exceeds the critical thickness. The diodes exhibit enhanced quantum efficiency and no degradation of the temporal response compared with devices grown on planar substrates, indicating that red...
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ژورنال
عنوان ژورنال: Journal of the Magnetics Society of Japan
سال: 1999
ISSN: 0285-0192
DOI: 10.3379/jmsjmag.23.682